Nitride Semiconductor Devices

Nitride Semiconductor Devices: Principles and Simulation  

Posted by ChrisRedfield at July 23, 2015
Nitride Semiconductor Devices: Principles and Simulation

Joachim Piprek - Nitride Semiconductor Devices: Principles and Simulation
Published: 2007-04-09 | ISBN: 3527406670 | PDF | 519 pages | 8.64 MB
Nitride Semiconductor Devices: Principles and Simulation (repost)

Nitride Semiconductor Devices: Principles and Simulation by Joachim Piprek
English | Pages: 519 | 2007-03-26 | ISBN: 3527406670 | PDF | 7,7 MB

This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet.
Nitride Semiconductor Devices: Fundamentals and Applications [Repost]

Hadis MorkoƧ - Nitride Semiconductor Devices: Fundamentals and Applications
Published: 2013-05-20 | ISBN: 3527411011 | PDF | 474 pages | 13 MB
Nitride Semiconductor Devices: Fundamentals and Applications

Nitride Semiconductor Devices: Fundamentals and Applications by Hadis Morkoc
English | 2013 | ISBN: 3527411011 | 474 pages | PDF | 13,5 MB

This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research.
Nitride Semiconductor Devices: Principles and Simulation (repost)

Joachim Piprek, "Nitride Semiconductor Devices: Principles and Simulation"
English | Pages: 519 | 2007-03-26 | ISBN 3527406670 | PDF | 7,7 MB

This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet.
Nano-Scaled Semiconductor Devices : Physics, Modelling, Characterisation, and Societal Impact

Nano-Scaled Semiconductor Devices :
Physics, Modelling, Characterisation, and Societal Impact

by Edmundo A. Gutierrez-D
English | 2016 | ISBN: 1849199302 | 465 Pages | True PDF | 16 MB

The rapid evolution of integrated circuit technology has brought with it many new materials and processing steps, at the nano-scale, which boost the electrical performance of devices, resulting in faster and more functionally-complex electronics.

Ill-Nitride Semiconductor Materials [Repost]  eBooks & eLearning

Posted by tanas.olesya at March 19, 2016
Ill-Nitride Semiconductor Materials [Repost]

Ill-Nitride Semiconductor Materials by Zhe Chuan Feng
English | 20 Mar. 2006 | ISBN: 1860946364 | 440 Pages | PDF | 23 MB

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded.
Introduction to Semiconductor Devices: For Computing and Telecommunications Applications (repost)

Introduction to Semiconductor Devices: For Computing and Telecommunications Applications by Kevin F. Brennan
English | ISBN: 0521153611 , 0521831504 | 2010 | PDF | 336 pages | 5 MB

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries.
Breakdown Phenomena in Semiconductors and Semiconductor Devices (repost)

Breakdown Phenomena in Semiconductors and Semiconductor Devices by Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein
English | 2005-09-30 | ISBN: 9812563954 | 224 pages | PDF | 9,1 MB

Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions.
Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices (Repost)

Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices
Publisher: Wiley-VCH | 2009 | ISBN: 3527408398 | English | True PDF | 898 pages | 7.89 Mb

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.